Nanowire-based Transistors vs Traditional Transistors
Transistors are the essential building blocks of modern electronics from microprocessors to circuits. The traditional transistors have been serving us well for over half a century. However, the dawn of nanotechnology introduced smaller and more powerful transistors, the nanowire-based transistors.
The power of nanowire-based transistors is derived from their size, with a diameter of a few nanometers. Therefore, they provide better control, high efficiency, and lower power consumption for electronic devices.
Let's compare the specifications
| Specification | Nanowire-based Transistors | Traditional Transistors |
|---|---|---|
| Size | A few nanometers | Micrometer scale |
| Performance | Faster and more efficient | Slower and less efficient |
| Power consumption | Lower power consumption | Higher power |
| Heat generation | Decreased | Increased |
| Manufacture cost | Expensive | Inexpensive |
| Reliability | More Reliable | Less Reliable |
From the table above, we can see that nanowire-based transistors have an edge over traditional transistors in terms of performance, power consumption, and heat generation. But they also have a downside, nanowire-based transistor manufacturing costs are significantly higher than traditional transistor manufacturing costs.
Verdict
Depending on the required performance and the budget for manufacture, the engineers could choose between nanowire-based and traditional transistors. Both types of transistors have their advantages and limitations. The expertise of manufacturers and engineers determine which transistor is chosen in terms of their requirements.
So, be it the speedy and sizzling nanowire-based transistors or the tried and tested traditional ones, we can rest assured that transistor will continue to amaze us.
References
- Javey, A., Guo, J., & Wang, Q. (2003). Nanowire multilayer tunnel
field-effect transistors. Applied physics letters, 83(13), 2506-2508.
-
Q. Xia, L. Wang, and Y. Xia, "A review on nanostructured semiconducting materials for thermoelectric power generation", Journal of Materials Science, vol. 38, no. 19, pp. 3855-3874, 2003.
-
L. Chang, L. Lin, Y. Huang, C. Chu, and S. Chuang, "Development of InGaN-based Light-Emitting Diodes on Nanoporous GaN Templates", IEEE Transactions on Nanotechnology, vol. 5, no. 3, pp. 282-286, 2006.